Seventh Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

IRF1404PbF Product Highlights:
  • Advanced Process Technology, 7th generation of HEXFET® Power MOSFET
  • N-Channel Power MOSFET with Drain-to-Source Voltage of VDD = 40 Volt
  • Continuous Source-Drain Current (IS and ID) up to 202A*
  • Ultra Low On-Resistance, RDS(on) = 4 mΩ
  • Wide operating temperature range, from -55° to +175°C
  • Fast Switching: typical turn-on td(on)=17ns, rise time tr=190ns, turn-off td(off)=46ns, fall time tf=33ns, reverse recovery time trr ≤ 117 ns
  • Fully Avalanche Rated (see application note AN-1005)
*) Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 75A. For detail please consult attached datasheet.